PLASMA OXIDATION OF POLY(CYCLOHEXYLMETHYLSILANE) AND POLY(PHENYLMETHYLSILANE) THIN-FILMS

被引：7

作者：

FONSECA, JLC ^{[1
]}

BARKER, CP ^{[1
]}

BADYAL, JPS ^{[1
]}

机构：

[1] UNIV DURHAM,DEPT CHEM,SCI LABS,DURHAM DH1 3LE,ENGLAND

来源：

MACROMOLECULES | 1995年 / 28卷 / 18期

关键词：

D O I：

10.1021/ma00122a018

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Low-temperature glow discharge oxidation of poly(cyclohexylmethylsilane) and poly(phenylmethylsilane) thin films produces an SiOxHy-rich skin which blocks any further subsurface degradation. The rate and depth of oxygenation is found to be strongly influenced by the type of polysilane used.

引用

页码：6112 / 6115

页数：4

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