LOW-TEMPERATURE STM STUDY ON THE GROWTH OF ULTRATHIN AG FILMS ON SI(111)7X7

被引：35

作者：

MEYER, G

RIEDER, KH

机构：

[1] Institut für Experimentalphysik, Freie Universität Berlin, D-14195 Berlin

来源：

SURFACE SCIENCE | 1995年 / 331卷

关键词：

EPITAXY; LOW INDEX SINGLE CRYSTAL SURFACES; SCANNING TUNNELING MICROSCOPY; SILICON; SILVER;

D O I：

10.1016/0039-6028(95)00325-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the growth of ultrathin Ag films on Si(111)7 X 7 between 80-100 K with low temperature scanning tunneling microscopy. Upon completion of the first monolayer, 2D-layer-like growth is observed. Annealing of these Ag films produces atomically flat films with only few bulk defects like partial dislocations, stacking faults and twinning. These defects act as heterogeneous nucleation sites in the low temperature growth of additional Ag.

引用

页码：600 / 605

页数：6

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