RADIATION-INDUCED LEAKAGE CURRENTS IN N-CHANNEL SILICON-ON-SAPPHIRE MOSTS

被引：10

作者：

HARARI, E ^{[1
]}

MCGREIVY, DJ ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 11期

关键词：

D O I：

10.1109/T-ED.1977.18998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1277 / 1284

页数：8

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