1/F NOISE IN (100) NORMAL-CHANNEL SI-MOSFETS FROM T = 4.2-K TO T = 295-K

被引：10

作者：

HENDRIKS, EA

ZIJLSTRA, RJJ

机构：

[1] Rijksuniversiteit Utrecht, Utrecht, Neth, Rijksuniversiteit Utrecht, Utrecht, Neth

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 06期

关键词：

1/F NOISE - DRAIN CURRENT - DRAIN VOLTAGE - GATE VOLTAGE - NOISE SOURCES;

D O I：

10.1016/0038-1101(88)90413-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1105 / 1111

页数：7

共 22 条

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[7]

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