Simulation of oxygen vacancies at the Si-SiO2 interface

被引：10

作者：

Carniato, S ^{[1
]}

Boureau, G ^{[1
]}

Harding, J ^{[1
]}

机构：

[1] HARWELL LAB,THERET STUDIES DEPT AEA IND TECHNOL,DIDCOT OX11 0RA,OXON,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1995年 / 134卷 / 1-4期

关键词：

Monte-Carlo; interface; silicon; oxidation; vacancy;

D O I：

10.1080/10420159508227209

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The Si(001)/SiO2 (tridymite) interface has been simulated using a Monte-Carlo method. It has been shown that in this way reasonable values of angles and interatomic distances are obtained. The oxygen defect formation energy dependence with different vacancy sites has been studied. Because of coulombic interactions, the formation of vacancies is much easier in the vicinity of the interface.

引用

页码：179 / 183

页数：5

共 11 条

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