STRONG ROOM-TEMPERATURE INFRARED-EMISSION FROM ER-IMPLANTED POROUS SI

被引:59
作者
NAMAVAR, F
LU, F
PERRY, CH
CREMINS, A
KALKHORAN, NM
SOREF, RA
机构
[1] NORTHEASTERN UNIV,BOSTON,MA 02115
[2] ROME LAB,BEDFORD,MA 01731
关键词
D O I
10.1063/1.359403
中图分类号
O59 [应用物理学];
学科分类号
摘要
This communication demonstrates a strong, room-temperature (RT), infrared (IR) (1.54 μm) emission from Er-implanted red-emitting (peaked at 1.9 eV) porous silicon (Er:PSi). Erbium was implanted into porous Si, bulk Si, and quartz with a dose of 1015/cm2 at 190 keV and annealed for 30 minutes in N2 at temperatures ranging from 500 °C to 900 °C under identical conditions. No RT IR emission was observed from Er implanted quartz and silicon after annealing at 650 °C (although after annealing at 900 °C very weak emission was observed from quartz at 9 K). The highest RT emission intensity at 1.54 μm was from Er:PSi with a peak concentration of 1.5×1020/cm3 and annealed at 650 °C. Even the luminescence intensity from Er:PSi annealed at 500 °C was 26 times higher than that observed from Er-implanted quartz at 400 keV and annealed at 900 °C. A reduction in photoluminescence (PL) intensity of about a factor of two from Er:PSi over the 9 to 300 K temperature range was observed which is consistent with Er in wide band gap materials. © 1995 American Institute of Physics.
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页码:4813 / 4815
页数:3
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