VOLTAGE AND FLUENCE DEPENDENCE OF STRESS-GENERATED TRAPS INSIDE THIN SILICON-OXIDE

The density of traps generated inside of thin SiO2 has been calculated by measuring the transient discharge of the traps and applying the tunneling front model to these discharges. The number of traps created by the high voltage stress was proportional to the cube root of the fluence that flowed through the oxide during the stress. The trap generation rate varied as the (fluence)(-2/3). As was the case with interface trap generation, there was a voltage dependence to the bulk trap generation. The bulk trap generation was comparable in magnitude to the interface trap generation. The trap generation results were used to generate simulated time-dependent dielectric breakdown data using a model of dielectric breakdown based on random generation of traps inside the oxide. The simulated breakdown distributions agreed well with measured distributions.