MICROMACHINED MILLIMETER-WAVE SIS-MIXERS

被引:2
作者
DELANGE, G
JACOBSON, BR
HU, Q
机构
[1] Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge
基金
美国国家航空航天局;
关键词
D O I
10.1109/77.402758
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micromachined SIS-mixers for 90-115 GHz and for 180-230 GHz have been fabricated and tested. A micromachined SIS-mixer consists of an antenna-coupled superconducting tunnel junction fabricated on a thin SIN membrane which is placed inside a pyramidal horn structure. The horn is formed by anisotropic KOH-etching of [100] Si along the [111] crystal planes. The high accuracy of the etching and the ease of whole-wafer fabrication make this type of SIS mixers attractive for applications both at high frequencies and in imaging arrays. Experimental, results show that high-quality tunnel junctions can be reliably fabricated on thin SiN membranes. Experiments also show that the junctions are adequately cooled on the membrane and that sufficient LO-power can be coupled.
引用
收藏
页码:1087 / 1090
页数:4
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