HETEROGENEOUS NUCLEATION OF DAMAGE IN CRYSTALLINE SILICON WITH PICOSECOND 1.06-MU-M LASER-PULSES

被引：4

作者：

SHENG, DY

WALSER, RM

BECKER, MF

AMBROSE, JG

机构：

来源：

关键词：

D O I：

10.1063/1.92531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：99 / 101

页数：3

共 10 条

[1] AMBROSE JG, UNPUBLISHED
[2] AVALANCHE BREAKDOWN AND PROBABILISTIC NATURE OF LASER-INDUCED DAMAGE
BASS, M
BARRETT, HH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (03) : 338 - &
[3] BECKER MF, 1980, PICOSECOND PHENOMENA, V2, P290
[4] CHRISTIAN JW, 1965, PHYSICAL METALLURGY, P477
[5] LASER MIRROR DAMAGE IN GERMANIUM AT 10.6 MU
EMMONY, DC
HOWSON, RP
WILLIS, LJ
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (11) : 598 - 600
[6] LEAMY HJ, 1978, APPL PHYS LETT, V32, P536
[7] DAMAGE DISTRIBUTIONS IN HYDROGEN-BOMBARDED SILICON
NASHIYAMA, I
[J]. PHYSICAL REVIEW B, 1979, 19 (01): : 101 - 108
[8] ORON M, 1979, APPL PHYS LETT, V35, P783
[9] TURNBULL D, 1956, SOLID STATE PHYSICS, V3, P256
[10] WALSER RM, 1980, MRS LASER ELECTRON B