REMOVAL AND SCATTERING OF CHARGE-CARRIERS BY DEFECT CLUSTERS IN SEMICONDUCTORS

被引：6

作者：

KOLCHENKO, TI

LOMAKO, VM

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 48卷 / 01期

关键词：

D O I：

10.1002/pssa.2210480136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：263 / 269

页数：7

共 21 条

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[4] OPTICAL AND ELECTRICAL EFFECTS OF HIGH-CONCENTRATIONS OF DEFECTS IN IRRADIATED CRYSTALLINE GALLIUM-ARSENIDE [J].

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MITCHELL, EWJ .

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[5]

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[6] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

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[7] CARRIER REMOVAL IN NEUTRON IRRADIATED SILICON [J].

HOLMES, RR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :137-+

[8]

KOLCHENKO TI, 1975, FIZ TEKH POLUPROV, V9, P1759

[9]

KOLCHENKO TI, UNPUBLISHED

[10]

KONOPLEVA RF, 1970, PECULIARITIES RAD DA

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