MONOLAYER SCALE STUDY OF SEGREGATION EFFECTS IN INAS/GAAS HETEROSTRUCTURES

被引：22

作者：

GERARD, JM ^{[1
]}

DANTERROCHES, C ^{[1
]}

MARZIN, JY ^{[1
]}

机构：

[1] CNS,CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90678-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolution electron microscopy pairs of identical AlAs/GaAs quantum wells, in which an InAs monolayer is inserted at nominally symmetric positions in the well, close to one or the other interface. The absolute displacement of indium atoms due to surface segregation processes is studied with respect to the well-defined GaAs/AlAs interfaces. Both techniques show that the InAs-on-GaAs interface lies at its nominal position, which gives the first clear example of a kinetical freezing of segregation processes in semiconductor heterostructures. PL data allow us to refine previous estimates of the segregation efficiency and to compare quantitatively various growth techniques.

引用

页码：536 / 540

页数：5

共 7 条

[1]

ABSTREITER G, 1991, NATO ADV SCI I B-PHY, V253, P471

[2]

BERGER PR, 1987, J VAC SCI TECHNOL B, V5, P1182

[3]

DANTERROCHES C, 1989, NATO ADV SCI I B-PHY, V203, P47

[4] MONOLAYER-SCALE OPTICAL INVESTIGATION OF SEGREGATION EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES [J].