FRACTALS IN ANNEALED GE-AU AU BILAYER FILMS

被引:19
作者
BA, L
ZEN, JL
ZHANG, SY
WU, ZQ
机构
[1] Fundamental Physics Center, Structure Research Laboratory, University of Science and Technology of China
关键词
D O I
10.1063/1.359042
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ge-22 at. %Au/Au bilayer films annealed at various temperatures have been observed by transmission electron microscopy. The as-deposited bilayer film is composed of crystalline Ge,Au and metastable Ge0.4Au0.6 phases. The Au grain size is nonuniform, and no amorphous Ge is observed. During annealing at 60-350°C, patterns with several wide branches are generated that are different from the dense branching fractals induced by crystallization of amorphous Ge in a-Ge/Au films. The fractal dimension of the pattern (measured by the box-counting method) increases with the annealing temperature. The agglomeration of small Au grains to coarse Au grains in the Ge-Au/Au bilayer film may be the mechanism for the fractal structure formation. © 1995 American Institute of Physics.
引用
收藏
页码:587 / 590
页数:4
相关论文
共 10 条
[1]   APPEARANCE OF NEGATIVE FRACTAL-LIKE STRUCTURES IN PD-SI ALLOY-FILMS [J].
DUAN, JZ ;
WU, ZQ .
SOLID STATE COMMUNICATIONS, 1987, 64 (01) :1-5
[2]  
HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0
[3]  
HOU JG, 1989, THIN SOLID FILMS, V173, P77, DOI 10.1016/0040-6090(89)90539-7
[4]   EXPERIMENTAL DEMONSTRATION OF THE ROLE OF LOCAL LATENT-HEAT IN GE PATTERN-FORMATION [J].
HOU, JG ;
WU, ZQ .
PHYSICAL REVIEW B, 1990, 42 (06) :3271-3274
[5]   TEMPERATURE-DEPENDENCE OF FRACTAL FORMATION IN ION-IMPLANTED ALPHA-GE/AU BILAYER THIN-FILMS [J].
HOU, JG ;
WU, ZQ .
PHYSICAL REVIEW B, 1989, 40 (02) :1008-1012
[6]  
HOU JG, 1988, ACTA PHYS SINICA, V37, P1736
[7]   DEPENDENCE OF FRACTAL FORMATION ON THE THICKNESS RATIO IN AL/A-GE BILAYERS [J].
LI, BQ ;
ZHENG, B ;
ZHANG, SY ;
WU, ZQ .
PHYSICAL REVIEW B, 1993, 47 (07) :3638-3641
[8]   EFFECT OF DEPOSITED METALS ON CRYSTALLIZATION TEMPERATURE OF AMORPHOUS GERMANIUM FILM [J].
OKI, F ;
OGAWA, Y ;
FUJIKI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) :1056-&
[9]   THE FRACTAL CHARACTER OF ANNEAL-INDUCED AGGREGATION IN BILAYER FILMS OF THE GE-AU AND GE-AG SYSTEMS [J].
ZHANG, RJ ;
LI, L ;
WU, ZQ .
THIN SOLID FILMS, 1992, 208 (02) :295-303
[10]  
ZHANG RJ, 1993, J MATER SCI, V28, P1705