ELECTRICAL BREAKDOWN OF MOS STRUCTURES AND ITS DEPENDENCE UPON OXIDATION PROCESS

被引：6

作者：

LAVERTY, SJ

RYAN, WD

机构：

[1] Department of Electrical Engineering, Faculty of Applied Science and Technology, Queen's University of Belfast

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1969年 / 26卷 / 05期

关键词：

D O I：

10.1080/00207216908938174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanism, by which electrical breakdown of the insulant in M.O.S. structures occurs, is identified; thermodynamic breakdown, for positive metal voltages; intrinsic breakdown, for the opposite polarity. Thermodynamic breakdown and the fabrication process are shown to be related to the formation of conducting paths within the oxide. The intrinsic breakdown voltages for devices formed from a particular oxide ore found to be distributed about a mean value; this value being related to the oxidation temperature and oxide thickness. © 1969, Walter de Gruyter. All rights reserved.

引用

页码：471 / +

页数：1

共 4 条

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[2] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :222-+

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LAMPERT, MA .

PHYSICAL REVIEW, 1956, 103 (06) :1648-1656

[4]

REID SA, 1968, THESIS QUEENS U BELF

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