PARALLEL COMPUTATIONAL TECHNIQUES FOR SIMULATING DOPANT DIFFUSION IN SILICON

被引：1

作者：

BISWAS, R

AMARATUNGA, GAJ

机构：

来源：

IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1989年 / 136卷 / 03期

关键词：

D O I：

10.1049/ip-g-2.1989.0023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：135 / 137

页数：3

共 9 条

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