CARRIER TRANSPORT ACROSS METAL-POLYMER BARRIERS

被引：9

作者：

ASSADI, A

FU, Y

WILLANDER, M

SVENSSON, C

机构：

[1] Department of Physics and Measurement Technology, Linköping University, Linköping

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 04期

关键词：

TUNNELING; SCHOTTKY BARRIER DIODE; POLY(3-OCTYLTHIOPHENE);

D O I：

10.1143/JJAP.32.1696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical transport properties of aluminium-poly(3-octylthiophene) are investigated using current-voltage (I-V) measurement. The theoretical analysis of the I-V spectra measured at various temperatures shows that at relatively high forward voltage the forward current is dominated by the diffusion of charge carriers, while at lower forward bias and low temperature it is the tunneling current that dominates.

引用

页码：1696 / 1699

页数：4

共 16 条

[1] FIELD-EFFECT MOBILITY OF POLY(3-HEXYLTHIOPHENE)
ASSADI, A
SVENSSON, C
WILLANDER, M
INGANAS, O
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 195 - 197
[2] PROPERTIES OF THE PLANAR POLY(3-OCTYLTHIOPHENE) ALUMINUM SCHOTTKY-BARRIER DIODE
ASSADI, A
SVENSSON, C
WILLANDER, M
INGANAS, O
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 2900 - 2906
[3] BURROUGHES JH, 1988, NATURE, V137, P335
[4] FICHOU D, 1989, SYNTHETIC MET, V28, pC723, DOI 10.1016/0379-6779(89)90596-1
[5] THE SCHOTTKY DEVICE BASED ON DOPED POLY(PARA-PHENYLENE)
GOLDENBERG, LM
KRINICHNYI, VI
NAZAROVA, IB
[J]. SYNTHETIC METALS, 1991, 44 (02) : 199 - 203
[6] GUSTAFSSON G, 1990, J MOL ELECTRON, V6, P105
[7] ALPHA-SEXITHIENYL - A P-TYPE AND N-TYPE DOPABLE MOLECULAR SEMICONDUCTOR
HOROWITZ, G
FICHOU, D
GARNIER, F
[J]. SOLID STATE COMMUNICATIONS, 1989, 70 (03) : 385 - 388
[8] THERMOCHROMIC AND SOLVATOCHROMIC EFFECTS IN POLY(3-HEXYLTHIOPHENE)
INGANAS, O
SALANECK, WR
OSTERHOLM, JE
LAAKSO, J
[J]. SYNTHETIC METALS, 1988, 22 (04) : 395 - 406
[9] NEMANICH ORJ, 1984, METAL SEMICONDUCTOR
[10] FABRICATION AND CHARACTERISTICS OF SCHOTTKY GATED POLY(3-ALKYLTHIOPHENE) FIELD-EFFECT TRANSISTORS
OHMORI, Y
TAKAHASHI, H
MURO, K
UCHIDA, M
KAWAI, T
YOSHINO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A): : L610 - L611

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