REDUCTIVE DEPOSITION OF PD ON POROUS SILICON FROM AQUEOUS-SOLUTIONS OF PDCL2 - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY

被引：36

作者：

COULTHARD, I

JIANG, DT

LORIMER, JW

SHAM, TK

FENG, XH

机构：

[1] UNIV WESTERN ONTARIO,DEPT CHEM,LONDON N6A 5B7,ONTARIO,CANADA

[2] UNIV WISCONSIN,SYNCHROTRON RADIAT CTR,CANADIAN SYNCHROTRON RADIAT FACIL,STOUGHTON,WI 53589

来源：

LANGMUIR | 1993年 / 9卷 / 12期

关键词：

D O I：

10.1021/la00036a018

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A method for the deposition of palladium on the vast surface of porous silicon from aqueous solutions of PdCl2 is described. The deposited Pd and the porous silicon substrate have been characterized using X-ray absorption fine structure (XAFS) spectroscopy. It is found that deposition can be carried out in a controlled manner, that the deposited Pd is metallic, and that the oxidation-reduction reaction responsible for the reductive deposition of Pd from PdCl2(aq) takes place at specific surface sites.

引用

页码：3441 / 3445

页数：5

共 30 条

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