PROCESSING AND PROPERTIES OF PB(MG1/3NB2/3)O-3-PBTIO3 THIN-FILMS BY PULSED-LASER DEPOSITION

被引：93

作者：

TANTIGATE, C

LEE, J

SAFARI, A

机构：

[1] Department of Ceramics Science and Engineering, Rutgers University, Piscataway

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 13期

关键词：

D O I：

10.1063/1.113868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ thin films of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3, (PMN-PT), with composition x=0.1, 0.3, 0.35, and 0.4, were deposited on MgO(100) substrates by pulsed laser deposition. The optimum conditions to form (100) oriented PMN-PT perovskite phase were at substrate temperatures in the range of 535 to 575°C with an oxygen pressure of 200 mTorr. The Mg content in PMN-PT films was found to be essential to the formation of perovskite phase. Heterostructures of PMN-PT/La0.5Sr0.5CoO3 (LSCO) films were prepared on MgO(100) substrates to evaluate the dielectric properties of the films. The dielectric constant of PMN and PMN-PT films ranged from 1000 to 3800 at 10 kHz measured at room temperature. The highest dielectric constant was obtained from PMN films with 99% perovskite phase.© 1995 American Institute of Physics.

引用

页码：1611 / 1613

页数：3