SOME PROPERTIES OF GUNN-EFFECT OSCILLATIONS IN A BICONICAL CAVITY

[1] AMRON I, 1964, ELECTROCHEMICAL TECH, P327

[2] BLEANEY BI, 1959, ELECTRICITY MAGNETIS

[3] BOTT I, 1966, SEP S GALL ARS

[4] PERFORMANCE OF X-BAND GUNN OSCILLATORS OVER TEMPERATURE RANGE 30 DEGREES C TO 120 DEGREES C [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 522 - +

[5] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[6] BUTCHER PN, 1967, JAN I PHYS PHYS SOC

[7] THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 55 - +

[8] HOBSON GS, 1966, SEP P INT C MICR OPT, P314

[9] KING G, 1966, ELECTRON LETT, V2, P314

[10] KNIGHT JR, PRIVATE COMMUNICATIO

[1] AMRON I, 1964, ELECTROCHEMICAL TECH, P327

[2] BLEANEY BI, 1959, ELECTRICITY MAGNETIS

[3] BOTT I, 1966, SEP S GALL ARS

[4] PERFORMANCE OF X-BAND GUNN OSCILLATORS OVER TEMPERATURE RANGE 30 DEGREES C TO 120 DEGREES C [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 522 - +

[5] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[6] BUTCHER PN, 1967, JAN I PHYS PHYS SOC

[7] THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 55 - +

[8] HOBSON GS, 1966, SEP P INT C MICR OPT, P314

[9] KING G, 1966, ELECTRON LETT, V2, P314

[10] KNIGHT JR, PRIVATE COMMUNICATIO