THERMAL CREATION OF METASTABLE DEFECTS IN A-SI-H

被引:7
作者
REDFIELD, D
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D O I
10.1016/0022-3093(87)90187-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:783 / 786
页数:4
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[1]   EFFECT OF TEMPERATURE DURING ILLUMINATION ON ANNEALING OF METASTABLE DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
JACKSON, WB ;
STUTZMANN, M .
APPLIED PHYSICS LETTERS, 1986, 49 (15) :957-959
[2]   REVERSIBILITY OF RECOMBINATION-INDUCED DEFECT REACTIONS IN AMORPHOUS SI-H [J].
REDFIELD, D .
APPLIED PHYSICS LETTERS, 1986, 49 (22) :1517-1518
[3]  
REDFIELD D, IN PRESS 1987 P MATL
[4]  
REDFIELD DA, IN PRESS
[5]   EFFECTS OF DOPANTS AND DEFECTS ON LIGHT-INDUCED METASTABLE STATES IN A-SI-H [J].
SKUMANICH, A ;
AMER, NM ;
JACKSON, WB .
PHYSICAL REVIEW B, 1985, 31 (04) :2263-2269
[6]   STABILITY OF N-I-P AMORPHOUS-SILICON SOLAR-CELLS [J].
STAEBLER, DL ;
CRANDALL, RS ;
WILLIAMS, R .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :733-735
[7]  
STREET R, IN PRESS 1987 P MATL