SILICON MICROSTRIP DETECTOR RADIATION-DAMAGE BY 1.5 MEV ELECTRONS AND SYNCHROTRON RADIATION

被引：2

作者：

CHILINGAROV, AG ^{[1
]}

ROMANOV, LV ^{[1
]}

LEISTE, R ^{[1
]}

TRUTZSCHLER, K ^{[1
]}

机构：

[1] INST HOCHENERGIEPHYS,BERLIN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 01期

关键词：

Electrons - Semiconducting Silicon;

D O I：

10.1016/0168-9002(90)90464-H

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated the radiation hardness of silicon microstrip detectors by exposing them to 1.5 MeV electrons and synchrotron radiation, respectively. For 1.5 MeV electrons the observed effects can be explained by the generation of radiation defects in the bulk part of silicon. We have determined the damage constant, the leakage current increase and also different threshold doses, above which essential detector parameters (electronic noise, stability of dc-coupled readout electronics, charge collection efficiency) are getting influenced by the radiation damage. © 1990.

引用

页码：62 / 67

页数：6

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