FREQUENCY TRIPLERS AND QUADRUPLERS WITH GAAS SCHOTTKY-BARRIER DIODES AT 450 AND 600 GHZ

被引：25

作者：

TAKADA, T

OHMORI, M

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 05期

关键词：

D O I：

10.1109/TMTT.1979.1129660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submillimeter-wave solid-state sources have been developed with a frequency tripler and a frequency quadrupler driven by an 150-GHz band IMPATT oscillator. The tripler and quadrupler delivered an output power of - 9.3 dBm at 447 GHz with a conversion loss of 20 dB, and - 28 dBm at 589 GHz with a conversion loss of 39 dB, respectively. The frequency multiplication was performed by use of GaAs-Ni-Au Schottky-barrier diodes with junction diameter of 1–3 μm and hybrid integrated circuit techniques. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：519 / 523

页数：5

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