400 GHZ BAND OPERATION OF COOLED SILICON IMPATT DIODES

被引：1

作者：

ISHIBASHI, T

INO, M

MAKIMURA, T

OHMORI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷

关键词：

D O I：

10.7567/JJAPS.17S1.173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：173 / 178

页数：6

共 9 条

[1] TEMPERATURE-DEPENDENCE OF CARRIER IONIZATION RATES AND SATURATED VELOCITIES IN SILICON [J].

DECKER, DR ;

DUNN, CN .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) :527-547

[2] EFFECT OF SERIES RESISTANCE ON AVALANCHE DIODE (IMPATT) OSCILLATOR EFFICIENCY [J].

GEWARTOW.JW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (06) :1139-&

[3] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].

GRANT, WN .

SOLID-STATE ELECTRONICS, 1973, 16 (10) :1189-1203

[4] A SMALL-SIGNAL THEORY OF AVALANCHE NOISE IN IMPATT DIODES [J].

GUMMEL, HK ;

BLUE, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :569-&

[5] SUBMILLIMETER WAVE SI P+-P-N+ IMPATT DIODES [J].

INO, M ;

ISHIBASHI, T ;

OHMORI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :89-92

[6] 200-GHZ 50-MW CW OSCILLATION WITH SILICON SDR IMPATT DIODES [J].

ISHIBASHI, T ;

OHMORI, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (11) :858-859

[7] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].

MOLL, JL ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :147-157

[8]

OHMORI M, UNPUBLISHED

[9] THRESHOLD ENERGY EFFECT ON AVALANCHE BREAKDOWN VOLTAGE IN SEMICONDUCTOR JUNCTIONS [J].

OKUTO, Y ;

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1975, 18 (02) :161-168

← 1 →