MESFET MODEL FOR CIRCUIT ANALYSIS

被引：10

作者：

HARTGRING, CD ^{[1
]}

OLDHAM, WG ^{[1
]}

CHIU, TY ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1016/0038-1101(80)90146-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / 126

页数：6

共 17 条

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[7] SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR
MEAD, CA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02): : 307 - &
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1023 - 1027
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