LASER ANNEALING FOR SEMICONDUCTOR-DEVICES

被引:6
作者
BOYD, IW
WILSON, JIB
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D O I
10.1038/287278a0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
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页码:278 / 278
页数:1
相关论文
共 5 条
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[2]  
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[3]   RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J].
LO, HW ;
COMPAAN, A .
PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1604-1607
[4]   REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].
VANVECHTEN, JA ;
TSU, R ;
SARIS, FW ;
HOONHOUT, D .
PHYSICS LETTERS A, 1979, 74 (06) :417-421
[5]  
1979, LASER SOLID INTERACT, V50