LUMINESCENCE DECAY IN DISORDERED LOW-DIMENSIONAL SEMICONDUCTORS

被引：121

作者：

CHEN, X

HENDERSON, B

ODONNELL, KP

机构：

[1] Department of Physics and Applied Physics, University of Strathclyde, Glasgow

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The luminescence decay of excitons in disordered low-dimensional semiconductors with quantum confinement is shown experimentally to be characterized by a nonexponential profile and an absence of spectral diffusion. We are able to describe this luminescence as a hopping-assisted recombination using the correlation function approach to nondispersive transport developed by H. Scher, M. F. Shlesinger, and J. T. Bendler [Phys. Today 41, 26 (1991)]. We suggest a simple derivation of analytical functions which accurately describe the anomalous luminescence decays of disordered II-VI superlattices and of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119, 352 (1863)] (stretched-exponential) relaxations as special cases.

引用

页码：2672 / 2674

页数：3

共 17 条

[11] THE GROWTH OF ZNSE/CDSE AND ZNS/CDS STRAINED LAYER SUPERLATTICES BY MOVPE [J].