PHOTOSENSITIVITY OF IN-P-CUINXGA1-XSE2 THIN-FILM STRUCTURES

被引：12

作者：

GREMENOK, VF ^{[1
]}

ZARETSKAYA, EP ^{[1
]}

BODNAR, IV ^{[1
]}

RUD, YV ^{[1
]}

MAGOMEDOV, MA ^{[1
]}

机构：

[1] MINSK RADIOENGN INST, MINSK 220660, BELARUS

来源：

THIN SOLID FILMS | 1993年 / 232卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90775-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film polycrystalline layers of the quaternary compounds CuInxGa1-xSe2 with 0 less-than-or-equal-to x less-than-or-equal-to 1 of chalcopyrite structure have been prepared by laser-assisted evaporation. Schottky barriers have been formed on the deposited films using indium. By illuminating the samples through the semitransparent indium contact, the spectral dependence of the photocurrent on the atomic composition has been investigated. The analysis of some preliminary data on the structures examined is presented.

引用

页码：139 / 141

页数：3

共 9 条

[1]

AERMAN AM, 1983, J CRYST GROWTH, V61, P658

[2] OPTICAL-PROPERTIES OF SOLID-SOLUTIONS CUGA XIN1-XSE2 [J].