PREPARATION OF INDIUM TIN OXIDE-FILMS AT ROOM-TEMPERATURE BY PULSED-LASER DEPOSITION

被引：71

作者：

ZHENG, JP ^{[1
]}

KWOK, HS ^{[1
]}

机构：

[1] SUNY Buffalo, DEPT ELECT & COMP ENGN, BUFFALO, NY 14260 USA

来源：

THIN SOLID FILMS | 1993年 / 232卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90769-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of room temperature laser deposited indium tin oxide films were studied. It was found that the resistivity of the film was quite sensitive to the deposition conditions. At the optimized conditions, films with a bulk resistivity value of 2.8 x 10(-4) OMEGA cm and optical transmission of greater than 90% could be obtained. By using an in situ resistance measurement, it was shown that the initial growth mode was via island formation. Additionally, a classic transition from two- to three-dimensional behavior for the resistance was observed. The mean free path obtained was 550 angstrom.

引用

页码：99 / 104

页数：6