COMPENSATION STRUCTURES FOR CONVEX CORNER MICROMACHINING IN SILICON

被引：68

作者：

PUERS, B

SANSEN, W

机构：

[1] Katholieke Universiteit Leuven, Departement Elektrotechniek, E.S.A.T., B-3030 Heverlee

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87085-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to gain precise information on the convex corner undercutting when using anisotropic etchants for silicon, a test mask has been elaborated, incorporating structures with orientations different from those of the wafer flats. The aim is to determine the behaviour of the etchants in terms of crystal orientation. These masks allow an insight to be gained into crystal-dependent etch rates, focusing in detail on the <120> and <130> directions. A second set of masks has been developed with an integrated edge compensation, using the etch depth as a parameter. This results in a novel compensation technique for preventing convex corner undercutting. Two types of etchant compositions are examined: an aqueous solution of KOH, and the same solution in combination with isopropyl alcohol (IPA); the first etchant has distinct advantages when precise convex corners are required. © 1990.

引用

页码：1036 / 1041

页数：6

共 7 条

[1] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J].