ULTRA-LOW REFLECTIVITY BROAD-BAND 1.5 MU-M GAINASP SEMICONDUCTOR OPTICAL AMPLIFIERS

被引:6
作者
BARNSLEY, PE
ISAAC, JJ
ELTON, DJ
机构
[1] British Telecom Research Laboratories, Martlesham Heath, Ipswich
关键词
Amplifiers; Optical communications; Semiconductor devices and materials;
D O I
10.1049/el:19900539
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Laser amplifiers with facet reflectivities of 3 × 10-5 over a bandwidth of 70 nm have been produced by combining a multilayer AR coating with angled device facets. The facet reflectivities were found to be highly reproducible. The amplifiers have a saturated output power in excess of + 5 dBm. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:825 / 827
页数:3
相关论文
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