1.3MU-M GAINASP NEAR-TRAVELING-WAVE LASER-AMPLIFIERS MADE BY COMBINATION OF ANGLED FACETS AND ANTIREFLECTION COATINGS

被引：26

作者：

ZAH, CE

CANEAU, C

SHOKOOHI, FK

MENOCAL, SG

FAVIRE, F

REITH, LA

LEE, TP

机构：

[1] Bell Communications Research Inc, United States

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 20期

关键词：

D O I：

10.1049/el:19880868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

6

引用

收藏

页码：1275 / 1276

页数：2

相关论文

共 6 条

[1] 313-KM TRANSMISSION EXPERIMENT AT 1-GBIT/S USING OPTICAL AMPLIFIERS AND A LOW CHIRP LASER
OBERG, MG
OLSSON, NA
KOSZI, LA
PRZYBYLEK, GJ
[J]. ELECTRONICS LETTERS, 1988, 24 (01) : 38 - 39
[2] ULTRA-LOW REFLECTIVITY 1.5-MU-M SEMICONDUCTOR-LASER PREAMPLIFIER
OLSSON, NA
OBERG, MG
TZENG, LD
CELLA, T
[J]. ELECTRONICS LETTERS, 1988, 24 (09) : 569 - 570
[3] THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS
SAITOH, T
MUKAI, T
MIKAMI, O
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) : 288 - 293
[4] BROAD-BAND 1.5 MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIER WITH HIGH-SATURATION OUTPUT POWER
SAITOH, T
MUKAI, T
[J]. ELECTRONICS LETTERS, 1987, 23 (05) : 218 - 219
[5] DIRECTLY CONTROLLED DEPOSITION OF ANTIREFLECTION COATINGS FOR SEMICONDUCTOR-LASERS
SERENYI, M
HABERMEIER, HU
[J]. APPLIED OPTICS, 1987, 26 (05): : 845 - 849
[6] FABRICATION AND PERFORMANCE OF 1.5-MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIERS WITH ANGLED FACETS
ZAH, CE
OSINSKI, JS
CANEAU, C
MENOCAL, SG
REITH, LA
SALZMAN, J
SHOKOOHI, FK
LEE, TP
[J]. ELECTRONICS LETTERS, 1987, 23 (19) : 990 - 992