SCREENING, INSTABILITY OF UNIFORM STATE, AND CHARGE CARRIER SCATTERING IN HEAVILY DOPED FERROMAGNETIC SEMICONDUCTORS

被引：26

作者：

NAGAEV, EL ^{[1
]}

GRIGIN, AP ^{[1
]}

机构：

[1] MINIST ELECTROTECH IND USSR, MOSCOW, USSR

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1974年 / 65卷 / 02期

关键词：

D O I：

10.1002/pssb.2220650204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：457 / 467

页数：11

共 13 条

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[2] BONCHBRUEVICH VL, 1973, USP FIZ NAUK, V111, P451
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GRIGIN, AP
NAGAEV, EL
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (01): : 65 - 75
[4] GRIGIN AP, 1974, TMF, V18, P393
[5] INHOMOGENEOUS ELECTRON-GAS
RAJAGOPAL, AK
CALLAWAY, J
[J]. PHYSICAL REVIEW B, 1973, 7 (05) : 1912 - 1919
[6] KRIVOGLAZ MA, 1972, SOV PHYS JETP, V63, P670
[7] DIELECTRIC-CONSTANT OF AN EXCHANGE-POLARIZED ELECTRON-GAS AND METAL-SEMICONDUCTOR TRANSITION IN DOPED EUO
LEROUXHUGON, P
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (04) : 939 - +
[8] Nagaev E. L., 1969, Fizika Tverdogo Tela, V11, P2779
[9] TRANSITION OF HEAVILY DOPED FERROMAGNETIC SEMICONDUCTORS TO INSULATING STATE
NAGAEV, EL
GRIGIN, AP
[J]. PHYSICS LETTERS A, 1972, A 38 (07) : 469 - &
[10] NAGAEV EL, 1972, JETP LETT, V16, P558