HIGH-POWER OUTPUT 1.48-1.51 MU-M CONTINUOUSLY GRADED INDEX SEPARATE CONFINEMENT STRAINED QUANTUM-WELL LASERS

被引:42
作者
TANBUNEK, T
LOGAN, RA
OLSSON, NA
TEMKIN, H
SERGENT, AM
WECHT, KW
机构
关键词
D O I
10.1063/1.103722
中图分类号
O59 [应用物理学];
学科分类号
摘要
A record high power output strained-layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 μm is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 μm and a facet reflectivity of ∼5 and 85% for the front and the rear facets, respectively. The laser has a threshold of 30 mA and a slope efficiency as high as 0.4 mW/mA.
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页码:224 / 226
页数:3
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