PHYSICS OF INSTABILITIES IN AMORPHOUS SEMICONDUCTORS

被引：68

作者：

FRITZSCHE, H

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 05期

关键词：

D O I：

10.1147/rd.135.0515

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Four-fold classification of currentcontrolled instabilities in amorphous semiconductors is proposed; experimental evidence supporting simple band model for amorphous covalent alloys is given; present understanding of reversible switching effects and of switching with memory is discussed.

引用

页码：515 / +

页数：1

共 38 条

[1]

ANDRIESH AM, 1963, SOV PHYS-SOL STATE, V5, P1063

[2] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].