EFFECTS OF POSITIVELY CHARGED ACCEPTOR CENTERS ON CYCLOTRON-RESONANCE IN PARA-TYPE SILICON

被引：8

作者：

OHYAMA, T ^{[1
]}

SANADA, T ^{[1
]}

OTSUKA, E ^{[1
]}

机构：

[1] OSAKA UNIV,COLL GEN EDUC,DEPT PHYS,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1973年 / 34卷 / 05期

关键词：

D O I：

10.1143/JPSJ.34.1245

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1245 / 1247

页数：3

共 7 条

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[5] LINE BROADENING OF ELECTRON CYCLOTRON RESONANCE IN GERMANIUM DUE TO ELECTRON-EXCITON INTERACTION [J].

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[6] ELECTRON SCATTERING BY NEUTRALIZED ACCEPTORS IN GERMANIUM .1. GALLIUM AND INDIUM [J].

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[7] CYCLOTRON RESONANCE OF DOPED SILICON [J].

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