CYCLOTRON RESONANCE OF DOPED SILICON

[1] CYCLOTRON RESONANCE OVER A WIDE TEMPERATURE RANGE .2. SILICON [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1961, 262 (1310) : 365 - +

[2] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[3] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[4] ERGINSOY C, 1950, PHYS REV, V79, P1913

[5] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 309 - 311

[6] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J]. PHYSICAL REVIEW, 1959, 114 (05): : 1245 - 1256

[7] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J]. PHYSICAL REVIEW, 1959, 114 (05): : 1219 - 1244

[8] LINE-BROADENING OF CYCLOTRON RESONANCE DUE TO LATTICE + NEUTRAL IMPURITY SCATTERING IN SILICON + GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (01) : 30 - &

[9] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[10] LOW TEMPERATURE, MM-WAVE CYCLOTRON RESONANCE RELAXATION TIMES IN SILICON [J]. PHYSICS LETTERS, 1963, 4 (01): : 38 - 40

[1] CYCLOTRON RESONANCE OVER A WIDE TEMPERATURE RANGE .2. SILICON [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1961, 262 (1310) : 365 - +

[2] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[3] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[4] ERGINSOY C, 1950, PHYS REV, V79, P1913

[5] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 309 - 311

[6] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J]. PHYSICAL REVIEW, 1959, 114 (05): : 1245 - 1256

[7] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J]. PHYSICAL REVIEW, 1959, 114 (05): : 1219 - 1244

[8] LINE-BROADENING OF CYCLOTRON RESONANCE DUE TO LATTICE + NEUTRAL IMPURITY SCATTERING IN SILICON + GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (01) : 30 - &

[9] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[10] LOW TEMPERATURE, MM-WAVE CYCLOTRON RESONANCE RELAXATION TIMES IN SILICON [J]. PHYSICS LETTERS, 1963, 4 (01): : 38 - 40