CYCLOTRON-RESONANCE OF HOLES IN SURFACE SPACE-CHARGE LAYERS ON SI

被引:24
作者
KOTTHAUS, JP
RANVAUD, R
机构
[1] TECH UNIV MUNCHEN,DEPT PHYS,D-8046 GARCHING,FED REP GER
[2] MAX PLANCK INST SOLID MATTER RES,HIGH FIELD MAGNET LAB,F-38042 GRENOBLE,FRANCE
来源
PHYSICAL REVIEW B | 1977年 / 15卷 / 12期
关键词
D O I
10.1103/PhysRevB.15.5758
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5758 / 5761
页数:4
相关论文
共 30 条
[1]   FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI [J].
ABSTREITER, G ;
KOCH, JF ;
GOY, P ;
COUDER, Y .
PHYSICAL REVIEW B, 1976, 14 (06) :2494-2497
[2]  
ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[3]   CYCLOTRON-RESONANCE OF ELECTRONS IN AN INVERSION LAYER ON SI [J].
ABSTREITER, G ;
KNESCHAUREK, P ;
KOTTHAUS, JP ;
KOCH, JF .
PHYSICAL REVIEW LETTERS, 1974, 32 (03) :104-107
[4]   FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON [J].
ALLEN, SJ ;
TSUI, DC ;
DALTON, JV .
PHYSICAL REVIEW LETTERS, 1974, 32 (03) :107-110
[5]   MASS ENHANCEMENT AND SUBHARMONIC STRUCTURE OF CYCLOTRON-RESONANCE IN AN INTERACTING 2-DIMENSIONAL ELECTRON-GAS [J].
ANDO, T .
PHYSICAL REVIEW LETTERS, 1976, 36 (23) :1383-1385
[6]   DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J].
ANDO, T .
PHYSICAL REVIEW B, 1976, 13 (08) :3468-3477
[7]   THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM [J].
ANDO, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (04) :989-997
[8]  
BANGERT E, COMMUNICATION
[9]  
BANGERT E, 1974, 12TH P INT C PHYS SE, P714
[10]   SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS [J].
CHENG, YC ;
SULLIVAN, EA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :923-925