FIELD EFFECTS IN OSCILLATORY PHOTOCONDUCTIVITY

被引:7
作者
BARKER, JR
HEARN, CJ
机构
[1] School of Physics, University of Warwick
来源
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1969年 / 2卷 / 11期
关键词
D O I
10.1088/0022-3719/2/11/327
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The field dependence of oscillatory photoconductivity is discussed on the basis of an analytical model and detailed Monte Carlo calculations. The occurrence of negative photoconductivity is investigated with particular reference to the spatial distribution of electric field and the instability of the carrier system.
引用
收藏
页码:2128 / &
相关论文
共 13 条
[1]   MONTE CARLO SIMULATION OF OSCILLATORY PHOTOCONDUCTIVITY [J].
BARKER, JR ;
HEARN, CJ .
PHYSICS LETTERS A, 1969, A 29 (04) :215-&
[2]   MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].
BOARDMAN, AD ;
FAWCETT, W ;
REES, HD .
SOLID STATE COMMUNICATIONS, 1968, 6 (05) :305-&
[3]   GUNN EFFECT [J].
BUTCHER, PM .
REPORTS ON PROGRESS IN PHYSICS, 1967, 30 :97-+
[4]   OSCILLATORY INTRINSIC PHOTOCONDUCTIVITY OF GASB + INSB [J].
HABEGGER, MA ;
FAN, HY .
PHYSICAL REVIEW LETTERS, 1964, 12 (04) :99-&
[5]   THEORY OF GUNN EFFECT [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1736-&
[6]  
KROEMER H, 1966, T IEEE, VED13, P27
[7]  
KUROSAWA T, 1966, J PHYS SOC JPN, VS 21, P424
[8]  
MCCUMBER DE, 1966, T I ELECT ELECTRON E, VED13, P4
[9]  
PAIGE EGS, 1964, PROGRESS SEMICONDUCT, V8, P55
[10]   NEGATIVE RESISTANCE ARISING FROM TRANSIT TIME IN SEMICONDUCTOR DIODES [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (04) :799-826