LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF SINGLE QUANTUM-WELL GAAS/ALGAAS LASERS

被引：12

作者：

MIYAZAWA, S

SEKIGUCHI, Y

机构：

[1] Canon Research Center, Morino-sato, Atsugi, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 5B期

关键词：

LOW-TEMPERATURE GROWTH; GAAS; ALGAAS; MOLECULAR BEAM EPITAXY; SINGLE QUANTUM WELL; SEMICONDUCTOR LASER;

D O I：

10.1143/JJAP.30.L921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the low-temperature Molecular Beam Epitaxy (MBE) growth of single quantum well (SQW) GaAs/AlGaAs lasers under a low flux ratio. Lasing action was observed at a substrate temperature as low as 300-degrees-C. A threshold current density of 600 A/cm2 was obtained at the substrate temperature of 375-degrees-C, which is the lowest threshold current density below 400-degrees-C reported so far.

引用

收藏

页码：L921 / L923

页数：3

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