HIGH-FREQUENCY ELECTROOPTIC FABRY-PEROT MODULATORS

被引：8

作者：

SIMES, RJ

YAN, RH

BARRON, CC

DERRICKSON, D

LISHAN, DG

KARIN, J

COLDREN, LA

RODWELL, M

ELLIOTT, S

HUGHES, B

机构：

[1] HEWLETT PACKARD CO,SANTA ROSA,CA 95403

[2] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 06期

关键词：

D O I：

10.1109/68.91018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrooptic modulators built from GaAs/Al(x)Ga(1-x)As Fabry-Perot cavities operating up to 6.5 GHz are reported. The measured frequency response agrees well with the one predicted using an equivalent circuit model derived from high-speed electrical measurements. The parasitic capacitances have been reduced to approximately 30 fF by fabricating the devices on semi-insulating GaAs substrates and integrating them with onwafer bond pads which have dimensions compatible with microwave coplanar probes.

引用

页码：513 / 515

页数：3

共 12 条

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