ANALYSIS AND DESIGN OF A 4-TERMINAL SILICON PRESSURE SENSOR AT THE CENTER OF A DIAPHRAGM

被引：7

作者：

BAO, MH

WANG, Y

机构：

[1] Fudan Univ, Shanghai, China, Fudan Univ, Shanghai, China

来源：

SENSORS AND ACTUATORS | 1987年 / 12卷 / 01期

关键词：

This work 1s funded by the Science Fund of the Chinese Academy of Sciences; and technrcally supported by the IC Laboratory at the Institute of Mlcroelectronlcs The authors are grateful to Prof Xrde Xle and Prof. Pushan Tang for their support of the proJect. They are very grateful to Prof Wen H Ko and Mr Gongzhong Ye for their valuable discussions and suggestrons;

D O I：

10.1016/0250-6874(87)87005-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：49 / 56

页数：8

共 6 条

[1] BAO MH, 1985, FUNDAN J NATURAL SCI, V24, P315
[2] HALL-EFFECT DEVICES AS STRAIN AND PRESSURE SENSORS
KANDA, Y
YASUKAWA, A
[J]. SENSORS AND ACTUATORS, 1982, 2 (03): : 283 - 296
[3] OPTIMUM DESIGN CONSIDERATIONS FOR SILICON PRESSURE SENSORS USING A 4-TERMINAL GAUGE
KANDA, Y
[J]. SENSORS AND ACTUATORS, 1983, 4 (02): : 199 - 206
[4] LOVE AEH, 1944, MATH THEORY ELASTICI, P495
[5] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
[J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49
[6] WU XP, 1982, SENSOR ACTUATOR, V2, P309

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