1ST PRINCIPLES CALCULATIONAL METHODS FOR SURFACE-VACANCY FORMATION ENERGIES, HEATS OF SEGREGATION, AND SURFACE CORE-LEVEL SHIFTS

被引：48

作者：

FEIBELMAN, PJ

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.4866

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：4866 / 4871

页数：6

相关论文

共 31 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU
BACHELET, GB
HAMANN, DR
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228
[2] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979
[3] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM
BARAFF, GA
KANE, EO
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686
[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON
BERNHOLC, J
LIPARI, NO
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3545 - 3562
[5] BROYDEN CG, 1965, MATH COMPUT, V19, P577, DOI DOI 10.1090/S0025-5718-1965-0198670-6
[6] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
CEPERLEY, DM
ALDER, BJ
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
[7] CORE-LEVEL SHIFT AT A JELLIUMLIKE SURFACE - A1(001)
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6836 - 6838
[8] SURFACE INDUCED BROADENING OF THE 2P CORE LEVELS OF AL
EBERHARDT, W
KALKOFFEN, G
KUNZ, C
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (10) : 901 - 905
[9] CORE-LEVEL BINDING-ENERGY SHIFTS AT SURFACES AND IN SOLIDS
Egelhoff, W. F., Jr.
[J]. SURFACE SCIENCE REPORTS, 1987, 6 (6-8) : 253 - 415
[10] SURFACE CORE-LEVEL SHIFTS AT THE END AND BEGINNING OF THE TRANSITION-METAL SERIES
ERBUDAK, M
KALT, P
SCHLAPBACH, L
BENNEMANN, K
[J]. SURFACE SCIENCE, 1983, 126 (1-3) : 101 - 104

← 1 2 3 4 →