EFFECTIVENESS OF SIO2 FOR PREVENTING SILICON METAL REACTIONS AT HIGH-TEMPERATURES

被引:14
作者
BEVOLO, AJ
CAMPISI, GJ
SHANKS, HR
SCHMIDT, FA
机构
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D O I
10.1063/1.327456
中图分类号
O59 [应用物理学];
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页码:5390 / 5395
页数:6
相关论文
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[3]   DEPOSITION OF POLYCRYSTALLINE SILICON FILMS ON METAL SUBSTRATES UNDER ULTRAHIGH-VACUUM [J].
RACETTE, GW ;
FROST, RT .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) :384-388
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Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359
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1977, HDB AUGER SPECTRA