DEPOSITION OF POLYCRYSTALLINE SILICON FILMS ON METAL SUBSTRATES UNDER ULTRAHIGH-VACUUM

Silicon layers up to 20μm thick have been sublimed from a resistively heated source onto tungsten and nickel substrates at pressures in the 10-10 Torr (10-8 Pa) range. Deposition onto tungsten at 500°C yielded Si grains up to 30-50 μm across conforming to those of the W substrate. Si orientation was strongly (110) and the W was (100). Above 600°C, WSi2 was formed. Below 500°C, the film was less strongly oriented. Deposition onto Ni yielded a silicide or very fine grained layers depending upon the temperature. © 1979.