STRESS COMPENSATION IN GAAS-AL0.24GA0.76AS1-YPY LPE BINARY LAYERS

[11] STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 533 - 535

[12] ROZGONYI GA, 1973, J ELECTROCHEM SOC, V120, pC333

[13] Schwartz B., 1973, Proceedings of the 4th International Symposium on Gallium Arsenide and Related Compounds, P187

[14] PHASE EXTENT OF GALLIUM ARSENIDE DETERMINED BY LATTICE CONSTANT AND DENSITY METHOD [J]. ACTA CRYSTALLOGRAPHICA, 1965, 19 : 256 - +

[15] Analysis of bi-metal thermostats [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA AND REVIEW OF SCIENTIFIC INSTRUMENTS, 1925, 11 (03): : 233 - 255

[11] STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 533 - 535

[12] ROZGONYI GA, 1973, J ELECTROCHEM SOC, V120, pC333

[13] Schwartz B., 1973, Proceedings of the 4th International Symposium on Gallium Arsenide and Related Compounds, P187

[14] PHASE EXTENT OF GALLIUM ARSENIDE DETERMINED BY LATTICE CONSTANT AND DENSITY METHOD [J]. ACTA CRYSTALLOGRAPHICA, 1965, 19 : 256 - +

[15] Analysis of bi-metal thermostats [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA AND REVIEW OF SCIENTIFIC INSTRUMENTS, 1925, 11 (03): : 233 - 255