BAND-STRUCTURE CALCULATION OF GESN AND SISN

被引：31

作者：

AMRANE, N

ABDERRAHMANE, SA

AOURAG, H

机构：

[1] Computational Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes

来源：

INFRARED PHYSICS & TECHNOLOGY | 1995年 / 36卷 / 05期

关键词：

D O I：

10.1016/1350-4495(95)00019-U

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The band structure of GeSn and SiSn in zinc-blende structures is predicted using the empirical pseudopotential. Special emphasis is placed on the effects of inversions asymmetry such as ionicity. We found that GeSn exhibits a direct band gap whereas SiSn still remains indirect gap material.

引用

收藏

页码：843 / 848

页数：6

相关论文

共 24 条

[1]

AOURAG H, 1994, IN PRESS MATER CHEM

[2] INTERBAND MASSES OF HIGHER INTERBAND CRITICAL-POINTS IN GE [J].

ASPNES, DE .

PHYSICAL REVIEW LETTERS, 1973, 31 (04) :230-233

[3] REFLECTIVITY OF GRAY TIN SINGLE CRYSTALS IN FUNDAMENTAL ABSORPTION REGION [J].

CARDONA, M ;

GREENAWAY, D .

PHYSICAL REVIEW, 1962, 125 (04) :1291-&

[4] VALENCE-BAND AND CONDUCTION-BAND DENSITIES OF STATES FOR TETRAHEDRAL SEMICONDUCTORS - THEORY AND EXPERIMENT [J].

CHELIKOWSKY, JR ;

WAGENER, TJ ;

WEAVER, JH ;

JIN, A .

PHYSICAL REVIEW B, 1989, 40 (14) :9644-9651

[5] BONDING AND IONICITY IN SEMICONDUCTORS [J].

CHRISTENSEN, NE ;

SATPATHY, S ;

PAWLOWSKA, Z .

PHYSICAL REVIEW B, 1987, 36 (02) :1032-1050

[6] MODEL PSEUDOPOTENTIAL CALCULATIONS OF ELECTRONIC AND BONDING PROPERTIES OF GROUP-IV ELEMENTS [J].

VAREADEALVAREZ, C ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (04) :1603-1609

[7] THE GROWTH OF METASTABLE, HETERO-EPITAXIAL FILMS OF ALPHA-SN BY METAL BEAM EPITAXY [J].

FARROW, RFC ;

ROBERTSON, DS ;

WILLIAMS, GM ;

CULLIS, AG ;

JONES, GR ;

YOUNG, IM ;

DENNIS, PNJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :507-518

[8] BAND-STRUCTURE CALCULATIONS OF GEXSI1-X [J].

FERHAT, M ;

ZAOUI, A ;

KHELIFA, B ;

AOURAG, H .

SOLID STATE COMMUNICATIONS, 1994, 91 (05) :407-411

[9]

FISCHER JE, 1970, 10 P INT C PHYS SEM, P427

[10] STRUCTURAL AND ELECTRONIC-PROPERTIES OF EPITAXIAL THIN-LAYER SIN GEN SUPERLATTICES [J].

FROYEN, S ;

WOOD, DM ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 37 (12) :6893-6907