OPTICAL INVESTIGATIONS OF GAAS/GA1-XALXAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引:5
作者
CHEN, Y [1 ]
CINGOLANI, R [1 ]
MASSIES, J [1 ]
NEU, G [1 ]
TURCO, F [1 ]
GARCIA, JC [1 ]
机构
[1] CNRS, PHYS SOLIDE & ENERGIE SOLAIRE LAB, F-06560 VALBONNE, FRANCE
来源
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1988年 / 10卷 / 09期
关键词
D O I
10.1007/BF02450207
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1093 / 1114
页数:22
相关论文
共 58 条
[1]   CALCULATIONS OF HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS AND SUPERLATTICES [J].
ALTARELLI, M ;
EKENBERG, U ;
FASOLINO, A .
PHYSICAL REVIEW B, 1985, 32 (08) :5138-5143
[2]   EFFECT OF SUBBAND COUPLING ON EXCITON BINDING-ENERGIES AND OSCILLATOR-STRENGTHS IN GAAS-GA1-XALXAS QUANTUM WELLS [J].
ANDREANI, LC ;
PASQUARELLO, A .
EUROPHYSICS LETTERS, 1988, 6 (03) :259-264
[3]   HOLE SUBBANDS IN STRAINED GAAS-GA1-XALX AS QUANTUM-WELLS - EXACT SOLUTION OF THE EFFECTIVE-MASS EQUATION [J].
ANDREANI, LC ;
PASQUARELLO, A ;
BASSANI, F .
PHYSICAL REVIEW B, 1987, 36 (11) :5887-5894
[4]   EXCITON BINDING-ENERGY IN QUANTUM WELLS [J].
BASTARD, G ;
MENDEZ, EE ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW B, 1982, 26 (04) :1974-1979
[5]   LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS [J].
BASTARD, G ;
DELALANDE, C ;
MEYNADIER, MH ;
FRIJLINK, PM ;
VOOS, M .
PHYSICAL REVIEW B, 1984, 29 (12) :7042-7044
[6]   COULOMBIC BOUND-STATES IN SEMICONDUCTOR QUANTUM WELLS [J].
BASTARD, G .
JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) :488-501
[7]   HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J].
BASTARD, G .
PHYSICAL REVIEW B, 1981, 24 (08) :4714-4722
[8]  
BAUER GEW, 1987, PHYS REV LETT, V601
[9]  
Bebb H B., 1972, SEMICOND SEMIMET, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5
[10]   ELECTRONIC-STRUCTURE OF MOLECULAR-BEAM-EPITAXY GROWTH-INDUCED DEFECTS IN GAAS [J].
BEYE, AC ;
GIL, B ;
NEU, G ;
VERIE, C .
PHYSICAL REVIEW B, 1988, 37 (09) :4514-4527