VERY LOW-VOLTAGE, NORMALLY-OFF ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR

被引：36

作者：

WHITEHEAD, M ^{[1
]}

RIVERS, A ^{[1
]}

PARRY, G ^{[1
]}

ROBERTS, JS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 19期

关键词：

Optical communications; Optical modulation;

D O I：

10.1049/el:19901018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the electro-absorptive properties of ≈150Å quantum wells in an asymmetric Fabry-Perot modulator (AFPM), a normally-off reflection modulator with very low drive voltage was demonstrated. With this device contrasts of more than 6dB at normal incidence in reflection have been achieved, with a voltage swing of only 3.5 V and ≤3dB insertion loss. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1588 / 1590

页数：3

共 9 条

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YAN, RH
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