CHARGING EFFECTS ON TRILEVEL RESIST WITH AN E-BEAM LITHOGRAPHY SYSTEM

被引：8

作者：

ITOH, H ^{[1
]}

NAKAMURA, K ^{[1
]}

HAYAKAWA, H ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,OHME 198,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.585180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charging effect on a trilevel resist system was investigated with a variable-shaped electron beam (e-beam) lithography system. A test pattern which consists of two-dimensionally arrayed marks was exposed on the trilevel resist and measured by the e-beam. A method evaluating the correlation of repetitive measurement errors due to charging has been developed. This evaluation method was characterized such that the repetitive measurement and charging process occurred simultaneously without a conductive coating on the resist. The evaluation method of the charging process at 20 and 30 kV is demonstrated in this article. The resist result is different from that of silicon dioxide, and these phenomena are discussed together with the associated discharging processes.

引用

页码：1893 / 1897

页数：5

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