INFLUENCE OF DEEP LEVEL INTRINSIC DEFECTS ON THE CARRIER TRANSPORT IN P-TYPE HG1-XCDXTE

The magnetic field dependence of the Hall effect in p-type Hg1-xCdxTe is analysed for determining the carrier densities and their mobilities in the mixed conduction range T = 70-250 K. A consistent description of the temperature dependence of the concentrations and mobilities of electrons and holes succeeds by taking into account energy-dependent momentum scattering times in the transport coefficients. Using this formalism, an energy level near 0.7Eg above the valence band edge caused by intrinsic defects which were influenced by thermal treament is determined and discussed. © 1989.