ELECTRICAL-PROPERTIES OF SHALLOW LEVELS IN P-TYPE HGCDTE

被引：57

作者：

FINKMAN, E

NEMIROVSKY, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.336506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1205 / 1211

页数：7

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